HUR30100PT , hur30120pt HUR30100PT hur30120pt v rsm v 1000 1200 v rrm v 1000 1200 symbol t est conditions maxim um ratings unit i frms i f a vm t c =125 o c; rectangular , d=0.5 35 2 x 15 a t vj t vjm t stg -55...+175 175 -55...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitiv e; i as =9a; l=180uh v a =1.25 . v r typ .; f=10khz; repetitiv e 90 8.7 0.9 a mj i ar a p tot t c =25 o c m d mounting torque typical 95 0.4...0.6 2 w nm w eight g high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode a=anode , c=cathode , t ab=cathode a a c c(tab) a c a dimensions t o-247ad dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102
HUR30100PT , hur30120pt ad v ant a ges * a v alanche v oltage r ated f or reliab le oper ation * soft re v erse reco v er y f or lo w emi/rfi * lo w i rm reduces: - p o w er dissipation within the diode - t ur n-on loss in the comm utating s witch applica tions * antipar allel diode f or high frequency s witching de vices * antisatur ation diode * sn ub ber diode * f ree wheeling diode in con v er ters and motor control circuits * rectifiers in s witch mode po w er supplies (smps) * inductiv e heating * uninterr uptib le po w er supplies (ups) * ultr asonic cleaners and w elders fea tures * inter national standard pac kage * planar passiv ated chips * v er y shor t reco v er y time * extremely lo w s witching losses * lo w i rm -v alues * soft reco v er y beha viour symbol t est conditions characteristic v alues typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 100 0.5 ua ma i r r thjc r thch 1.6 k/w t rr i f =1a; -di/dt=100a/us; v r =30v ; t vj =25 o c ns i rm v r =100v ; i f =25a; -di f /dt=100a/us; t vj =100 o c 4.5 a i f =15a; t vj =150 o c t vj =25 o c 1.79 2.75 v v f 0.5 40 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
HUR30100PT , hur30120pt high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode 200 600 1000 0 400 800 100 120 140 160 180 0. 00001 0. 0001 0 . 001 0. 01 0. 1 1 0. 001 0. 01 0. 1 1 10 0 4 0 8 0 120 160 0. 0 0. 5 1. 0 1. 5 2. 0 k f t vj c -d i f /d t t s k/ w 0 200 400 6 0 0 8 0 0 1000 0 40 80 120 0. 0 0. 4 0. 8 1. 2 v fr di f /d t v 200 6 0 0 1000 0 400 80 0 0 10 20 30 40 50 100 1000 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 012 34 0 5 10 15 20 25 30 35 40 i rm q r i f a v f -d i f /d t -d i f /d t a/ us a v c a/ us a/ us t rr ns t fr z th j c a/ us us i f = 30a i f = 15a i f = 7.5a t vj = 100 c v r = 600v t vj = 100 c i f = 15a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 600v t vj = 100 c v r = 600v i f = 30a i f = 15a i f = 7.5a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 30a i f = 15a i f = 7.5a t fr v fr fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.9084 0.0052 2 0.3497 0.0003 3 0.3419 0.0165 t vj =150 c t vj =100 c t vj = 25 c
|
